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this is information on a product in full production. november 2012 doc id 15572 rev 3 1/17 17 stfw6n120k3, STP6N120K3, stw6n120k3 n-channel 1200 v, 1.95 typ., 6 a supermesh3? power mosfet in to-3pf, to-220 and to-247 packages datasheet ? production data features 100% avalanche tested extremely large avalanche performance gate charge minimized very low intrinsic capacitances zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p tot stfw6n120k3 1200 v < 2.4 6 a 63 w STP6N120K3 1200 v < 2.4 6 a 150 w stw6n120k3 1200 v < 2.4 6 a 150 w to-220 to-247 to-3pf 1 2 3 1 2 3 1 2 3 ta b d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stfw6n120k3 6n120k3 to-3pf tu b e STP6N120K3 to-220 stw6n120k3 to-247 www.st.com
contents stfw6n120k3, STP6N120K3, stw6n120k3 2/17 doc id 15572 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stfw6n120k3, STP6N120K3, stw6n120k3 electrical ratings doc id 15572 rev 3 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-3pf to-220 to-247 v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 6 a i d drain current (continuous) at t c = 100 c 3.8 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 20 a p tot power dissipation at t c = 25 c 63 150 150 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 180 mj esd gate-source human body model (c = 100 pf, r = 1.5 k ) 6kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 3500 v t stg storage temperature -55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit to-3pf to-220 to-247 r thj-case thermal resistance junction-case 1.98 0.83 c/w r thj-amb thermal resistance junction-ambient max 50 62.5 50 c/w t j maximum lead temperature for soldering purpose 300 c
electrical characteristics stfw6n120k3, STP6N120K3, stw6n120k3 4/17 doc id 15572 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on / off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 1200 - - v i dss zero gate voltage drain current (v gs = 0) v ds = 1200 v v ds = 1200 v, t j = 125 c -- 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v - - 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2.5 a - 1.95 2.4 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1050 90 1 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss. equivalent capacitance time related v gs = 0, v ds = 0 to 960 v - 40 - pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equi valent capacitance giving t he same stored energy as c oss when v ds increases from 0 to 80% v dss. equivalent capacitance energy related v gs = 0, v ds = 0 to 960 v - 25 - pf r g intrinsic gate resistance f = 1 mhz open drain - 3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 960 v, i d = 7.2 a, v gs = 10 v (see figure 20 ) - 39 7.7 23.5 - nc nc nc
stfw6n120k3, STP6N120K3, stw6n120k3 electrical characteristics doc id 15572 rev 3 5/17 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times on/off symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off-delay time fall time v dd = 600 v, i d = 3.6 a, r g = 4.7 , v gs = 10 v (see figure 19 ) - 30 12 58 32 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) -- 6 20 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - -- 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7.2 a, di/dt = 100 a/s v dd = 60 v t j = 25 c (see figure 24 ) - 580 7 25 - ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7.2 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) - 840 9 22 - ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma (i d =0) 30 - v
electrical characteristics stfw6n120k3, STP6N120K3, stw6n120k3 6/17 doc id 15572 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for to-3pf figure 3. thermal impedance for to-3pf figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3inlge pulse !-v 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 to 3 pf i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 1000 am07 3 0 8 v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 1000 am07 3 09v1
stfw6n120k3, STP6N120K3, stw6n120k3 electrical characteristics doc id 15572 rev 3 7/17 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized bv dss vs temperature figure 11. static drain-source on-resistance figure 12. output capacitance stored energy figure 13. capacitance variations 6 6 6 6 '3 6 ) $ 6 $3 6 ! !-v ) $ 6 '3 6 ! 6 $3 6 !-v bv d ss -50 0 t j (c) (norm) 50 100 0. 8 5 0.90 0.95 1.00 1.05 1.10 am07911v1 r d s (on) 1. 8 1.4 1 0.5 2.5 i d (a) ( ) 1.5 3 .5 2.2 2.6 v g s =10v 4.5 am07909v1 % oss 6 $3 6 ?* !-v c 100 10 1 0.1 10 v d s (v) (pf) 1 1000 100 ci ss co ss cr ss am07912v1
electrical characteristics stfw6n120k3, STP6N120K3, stw6n120k3 8/17 doc id 15572 rev 3 figure 14. gate charge vs gate-source voltage figure 15. normalized on-resistance vs temperature figure 16. normalized gate threshold voltage vs temperature figure 17. maximum avalanche energy vs temperature figure 18. source-drain diode forward characteristics 6 '3 1 g n# 6 6 $3 6 $3 6 !-v r d s (on) 1.5 1 0.5 0 -75 25 t j (c) ( ) -25 75 2 2.5 v g s =10v 125 am079071v1 6 '3th 4 * ?# norm !-v % !3 4 * ?# m* !-v 4 * ?# 4 * ?# 4 * ?# 6 3$ ) 3$ ! 6 !-v
stfw6n120k3, STP6N120K3, stw6n120k3 test circuits doc id 15572 rev 3 9/17 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stfw6n120k3, STP6N120K3, stw6n120k3 10/17 doc id 15572 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
stfw6n120k3, STP6N120K3, stw6n120k3 package mechanical data doc id 15572 rev 3 11/17 figure 25. to-3pf drawing l 3 l di a l2 a c d d1 e h l5 l4 r n l6 l7 f( 3 x) f2( 3 x) g1 g 76271 3 2_c
package mechanical data stfw6n120k3, STP6N120K3, stw6n120k3 12/17 doc id 15572 rev 3 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stfw6n120k3, STP6N120K3, stw6n120k3 package mechanical data doc id 15572 rev 3 13/17 figure 26. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stfw6n120k3, STP6N120K3, stw6n120k3 14/17 doc id 15572 rev 3 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stfw6n120k3, STP6N120K3, stw6n120k3 package mechanical data doc id 15572 rev 3 15/17 figure 27. to-247 drawing 0075 3 25_g
revision history stfw6n120k3, STP6N120K3, stw6n120k3 16/17 doc id 15572 rev 3 5 revision history table 12. document revision history date revision changes 15-apr-2009 1 first release. 02-aug-2010 2 document status promoted from preliminary data to datasheet. inserted section 2.1: electrical characteristics (curves) . 14-nov-2012 3 figure 13: capacitance variations and figure 14: gate charge vs gate-source voltage have been corrected. minor text changes.
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